論文

61. Development of Atmospheric-Pressure Plasma Oxidation Process for Surface Passivation of Si ，Z. T. Zhuo, T. Ohnishi, K. Goto, Y. Sannomiya, H. Ohmi, H. Kakiuchi and K. Yasutake，Ext. Abst. 3rd Int. Symp. on Atomically Controlled Fabrication Technology，pp.208-209，2010年11月，国際会議（proceedingsあり）

62. Influence of Process Parameters on the Material Properties of Microcrystalline Si Prepared Using Atmospheric-Pressure Very High-Frequency Plasma，K. Tabuchi, A. Hirano, T. Yamada, H. Ohmi, H. Kakiuchi and K. Yasutake，Ext. Abst. 3rd Int. Symp. on Atomically Controlled Fabrication Technology，pp.210-211，2010年11月，国際会議（proceedingsあり）

63. Structural Characterization of Room-Temperature Silicon Oxides Deposited from Hexamethyldisiloxane-Oxygen Mixtures at Room Temperature Using Atmospheric-Pressure VHF Plasma，K. Yokoyama, Y. Mizuno, T. Yamada, H. Ohmi, H. Kakiuchi and K. Yasutake，Ext. Abst. 3rd Int. Symp. on Atomically Controlled Fabrication Technology，pp.212-213，2010年11月，国際会議（proceedingsあり）

64. Room-Temperature Deposition of Silicon Nitride Films with Very High Rates Using Atmospheric-Pressure Plasma Chemical Vapor Deposition，H. Kakiuchi, H. Ohmi, and K. Yasutake，Proc. 7th International Conference on Reactive Plasmas, 28th Symposium on Plasma Processing and 63rd Gaseous Electronics Conference, Paris, France, 2010，p. 48，2010年10月，国際会議（proceedingsなし）

65. Atmospheric-Pressure Plasma Oxidation Process for Passivation of Si Surface，Z.T. Zhuo, T. Ohnishi, K. Goto, Y. Sannomiya, H. Ohmi, H. Kakiuchi and K. Yasutake，Conf. Proc. 7th ICRP and 63rd GEC，CTP-090，2010年10月，国際会議（proceedingsなし）

66. Purified Si Film Formation from Metallurgical-Grade Si by Hydrogen Plasma Induced Chemical Transport，K. Yasutake, H. Ohmi and H. Kakiuchi，Conf. Proc. 7th ICRP and 63rd GEC，VF2-001，2010年10月，国際会議（proceedingsなし）

67. Room-Temperature Silicon Nitrides Prepared with Very High Rates (>50 nm/s) in Atmospheric-Pressure Very High-Frequency Plasma，H. Kakiuchi, H. Ohmi, K. Nakamura, Y. Yamaguchi, and K. Yasutake，Plasma Chem. Plasma Process.，30, pp. 579–590，2010年09月，学術論文

68. Low refractive index silicon oxide coatings at room temperature using atmospheric-pressure very high-frequency plasma，H. Kakiuchi, H. Ohmi, Y. Yamaguchi, K. Nakamura, and K. Yasutake，Thin Solid Films，519, pp. 258–262，2010年09月，学術論文

69. Chemical Transport Deposition of Purified Poly-Si Films from Metallurgical-Grade Si Using Subatmospheric-Pressure H2 Plasma，K. Yasutake, H. Ohmi and H. Kakiuchi，Abst. 2010 MRS Spring Meeting, Symposium A: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology–2010, San Francisco, April 6-9, 2010 (A10.1).，2010年04月，会議報告/口頭発表

70. Characterization of microcrystalline Si films deposited at low temperatures with high rates by atmospheric-pressure plasma CVD，K. Ouchi, K. Tabuchi, H. Ohmi, H. Kakiuchi, and K. Yasutake，Phys. Stat. Sol. (c)，Vol. 7, No. 3-4, pp. 545-548，2010年03月，学術論文

71. Investigation of structural properties of high-rate deposited SiNx films prepared at low temperatures (100-300 C) by atmospheric-pressure plasma CVD，Y. Yamaguchi, K. Nakamura, H. Ohmi, H. Kakiuchi, and K. Yasutake，Phys. Stat. Sol. (c)，Vol. 7, No. 3-4, pp. 824-827，2010年03月，学術論文

72. New Formation Process of Solar-Grade Si from Metallurgical-Grade Si by Chemical Transport in Near Atmospheric-Pressure Plasma，K. Yasutake, H. Ohmi and H. Kakiuchi，Abst. The 3 rd Int. Conf. on Plasma Nanotechnology & Science (IC-PLANTS 2010), Nagoya, March 11-12, 2010 (I-01).，2010年03月，会議報告/口頭発表

73. Study on the Growth of Microcrystalline Si Films at Low Temperatures in Atmospheric-Pressure VHF Plasma，K. Tabuchi, K. Ouchi, H. Ohmi, H. Kakiuchi and K. Yasutake，Ext. Abst. 2nd Int. Symp. on Atomically Controlled Fabrication Technology，pp. 160-161，2009年11月，国際会議（proceedingsあり）

74. New Formation Process of Solar-Grade Si Material Based on Atmospheric-Pressure Plasma Science，K. Yasutake, H. Ohmi, K. Inagaki and H. Kakiuchi，Ext. Abst. 2nd Int. Symp. on Atomically Controlled Fabrication Technology，pp. 24-25，2009年11月，国際会議（proceedingsあり）

75. Low-Temperature Si Epitaxial Growth by Atmospheric-Pressure Plasma CVD，T. Ohnishi, K. Goto, H. Ohmi, H. Kakiuchi and K. Yasutake，Ext. Abst. 2nd Int. Symp. on Atomically Controlled Fabrication Technology，pp. 156-157，2009年11月，国際会議（proceedingsあり）

76. Characterization of Room-Temperature Silicon Oxide Films Deposited with High Rates in Atmospheric-Pressure VHF Plasma，K. Nakamura, Y. Yamaguchi, K. Yokoyama, K. Higashida, H. Ohmi, H. Kakiuchi and K. Yasutake，Ext. Abst. 2nd Int. Symp. on Atomically Controlled Fabrication Technology，pp. 158-159，2009年11月，国際会議（proceedingsあり）

77. Characterization of High-Rate Deposited Microcrystalline Si Films Prepared Using Atmospheric-Pressure Very High-Frequency Plasma，K. Tabuchi, K. Ouchi, H. Ohmi, H. Kakiuchi, and K. Yasutake，ECS Transactions，25 [8], pp. 405–412 (2009)，2009年10月，学術論文

78. In Situ Doped Si Selective Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD，T. Ohnishi, Y. Kirihata, H. Ohmi, H. Kakiuchi, and K. Yasutake，ECS Transactions，25 [8], pp. 309-315 (2009)，2009年10月，学術論文

79. Investigation of Deposition Characteristics and Properties of High-Rate Deposited SiNx Films Prepared at Low Temperatures (100-300 C) by Atmospheric-Pressure Plasma CVD，Y. Yamaguchi, K. Nakamura, H. Ohmi, H. Kakiuchi, and K. Yasutake，Book of Abstracts of the 23rd International Conference on Amorphous and Nanocrystalline Semiconductors，p. 22，2009年08月，会議報告/口頭発表

80. Characterization of Microcrystalline Si Films Deposited at Low Temperatures with High Rates by Atmospheric-Pressure Plasma CVD，K. Ouchi, K. Tabuchi, H. Ohmi, H. Kakiuchi, and K. Yasutake，Book of Abstracts of the 23rd International Conference on Amorphous and Nanocrystalline Semiconductors，p. 42，2009年08月，会議報告/口頭発表