School personnel information

写真b

YASUTAKE Kiyoshi


Keyword

Materials Science, Thin Film Science

URL

http://www-ms.prec.eng.osaka-u.ac.jp/jpn/index.html

Gender

Male

Organization 【 display / non-display

  • 1999.04.01 - 2003.02.28, Graduate School of Engineering, Associate Professor

  • 2003.03.01 - 2003.07.31, Division of Precision Science & Technology and Applied Physics, Graduate School of Engineering, Associate Professor

  • 2003.08.01 - , Division of Precision Science & Technology and Applied Physics, Graduate School of Engineering, Professor

Education 【 display / non-display

Osaka University Faculty of Engineering  Graduated 1978.03

Research topics 【 display / non-display

  • Atomically controlled growth of semiconductor thin films and their characterization.
    Atomically controlled processes for functional surface preparation.
    Low-Temperature Growth of Epitaxial Si at High Growth Rate by Atmospheric Pressure Plasma Chemical Vapor Deposition.
    Experimental and theoretical analysis of elementary reaction steps that takes place on solid surfaces.
    Development of techniques to manipulate neutral atomic beam and its application to the fabrication of nanostructures.

 

Academic Papers 【 display / non-display

  • Determination of plasma impedance of microwave plasma system by electric field simulation, Mitsutoshi Shuto, Hiromasa Ohmi, Hiroaki Kakiuchi, Takahiro Yamada, and Kiyoshi Yasutake, Journal of Applied Physics,122(4) 043303-1-043303-8, 2017.07, Papers

  • Atmospheric-pressure low-temperature plasma processes for thin film deposition, H. Kakiuchi, H. Ohmi, and K. Yasutake, J. Vac. Sci. Technol. A,Vol. 32, No. 3, 030801-1-16, 2014.05, Papers

  • Study of the interaction between molten indium and sub-atmospheric pressure hydrogen glow discharge for low-temperature nanostructured metallic particle film deposition, H. Ohmi, H. Kakiuchi and K. Yasutake, Journal of Alloys and Compounds,,728 1217-1225, 2017.09, Papers

  • Atmospheric-Pressure Low-Temperature Plasma Processes, H. Kakiuchi, H. Ohmi, K. Yasutake, Encyclopedia of Plasma Technology,November 16, 2016 , 2016.11, Review Papers

  • Copper dry etching by sub-atmospheric-pressure pure hydrogen glow plasma, Hiromasa Ohmi, Jumpei Sato, Tatsuya Hirano, Yusuke Kubota, Hiroaki Kakiuchi, and Kiyoshi Yasutake, Applied Physics Letters,109 211603-1-211603-5, 2016.11, Papers

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Books 【 display / non-display

  • Other, Monthly DISPLAY, 2013.11

  • Special, Low-temperature and high-rate film growth technology using atmospheric-pressure plasma, Hiroaki Kakiuchi, Hiromasa Ohmi, Kiyoshi Yasutake, 2010.12

  • Special, New Coating Technologies, H. Kakiuchi, H. Ohmi, and K. Yasutake, CTI, 2009.10

  • Special, Materials Science Research Trends, H. Kakiuchi, H. Ohmi, and K. Yasutake, Nova Science Publishers, New York, 2008.10

  • Special, The Latest element Technology of Film Based Electronic, H. Kakiuchi, H. Ohmi, and K. Yasutake, CMC, 2008.10

Patents / Utility models / Designs 【 display / non-display

  • Japan, purification method and its equipment for Si and manufacturing equipment for purified Si, hiromasa Ohmi, Kiyoshi Yasutake,et al., 4660715(Registration), 2008.06, 2011.01

  • Japan, manufacturing method for selective growth of thin film, Hiromasa Ohmi, Kiyoshi Yasutake, Hiroaki Kakiuchi, 特願 2007-225020(Application), 2007.08

  • Japan, Crystalline SiC Formation Method by Carbonization of Si Surface and Crystalline SiC Substrates, H. Kakiuchi, H. Ohmi, K. Yasutake, 特願2005-329318(Registration), 2005.11

  • United States, Dry Etching Method and Apparatus, Masao Shimizu, Kumayasu Yoshii, and Kiyoshi Yasutake, 154763(Registration), 1998.09

  • United States, Dry Etching Method and Apparatus, Masao Shimizu, Kumayasu Yoshii, and Kiyoshi Yasutake, US006355569B1(Registration), 1997.09, 2002.03