School personnel information

写真b

SUGIMOTO Satoshi


Keyword

plasma physics, plasma process measurement, surface treatment

URL

http://www.camt.eng.osaka-u.ac.jp/

Organization 【 display / non-display

  • 1998.05.01 - 2003.03.31, Graduate School of Engineering, Associate Professor

  • 2003.04.01 - 2007.03.31, Science and Technology Center for Atoms,Molecules and Ions Control, Graduate School of Engineering, Associate Professor

  • 2007.04.01 - 2013.03.31, Science and Technology Center for Atoms,Molecules and Ions Control, Graduate School of Engineering, Associate Professor

  • 2013.04.01 - 2013.04.15, Center for Atomic and Molecular Technologies, Graduate School of Engineering, Associate Professor

  • 2013.04.16 - , Center for Atomic and Molecular Technologies, Graduate School of Engineering, Associate Professor

Education 【 display / non-display

Osaka University Faculty of Engineering  Graduated 1981.03
Osaka University Graduate School, Division of Engineering  Completed 1983.03
Osaka University Graduate School, Division of Engineering  Completed 1986.03

Employment Record 【 display / non-display

Research associate, Osaka University 1986.04 - 1996.06
Associate Professor, Osaka University 1996.07 - 2007.03
Associate Professor, Osaka University 2007.04 -

Research topics 【 display / non-display

  • Physical property of a hydrogen plasma and its appication
    Fundamental plasma-related, Earth resource engineering, Energy sciences-related

  • Development of measurent methods and control techniqes for plasma processes
    Semiconductors, optical properties of condensed matter and atomic physics-related, Measurement engineering-related, Fundamental plasma-related

  • Development of a processing plasma and its application
    Fundamental plasma-related, Thin film/surface and interfacial physical properties-related

 

Academic Papers 【 display / non-display

  • Production of low-energy fragment-ion beams from hexamethyldisiloxane and the irradiation of SiO+ ion beam to substrates with supplemental oxygen gas for SiO2 film formation, S. Yoshimura, S. Sugimoto, T. Takeuchi, M. Kiuchi, Nuclear Inst. and Methods in Physics Research, B,Vol. 479, pp. 13-17, 2020.09, Papers

  • Characteristics of films deposited by the irradiation of GeCHx+ ions produced from hexamethyldigermane and their dependence on the injected ion energy, S. Yoshimura, S. Sugimoto, T. Takeuchi, K. Murai, M. Kiuchi, Nuclear Instruments and Methods in Physics Research B,Vol. 461, pp. 1-5, 2019.12, Papers

  • Effects of injected ion energy on silicon carbide film formation by low-energy SiCH3+ beam irradiation, S. Yoshimura, S. Sugimoto, T. Takeuchi, K Murai, M. Kiuchi, Thin Solid Films,Vol. 685, pp. 408-413., 2019.09, Papers

  • Low-energy mass-selected ion beam deposition of silicon carbide with Bernas-type ion source using methylsilane, S. Yoshimura, S. Sugimmoto, T. Takeuchi, K. Murai, M. Kiuchi, AIP Advances,Vol. 9, 095051, 2019.09, Papers

  • Identification of fragment ions produced from hexamethyldigermane and the production of low-energy beam of fragment ion possessing Ge-C bond, S. Yoshimura, S. Sugimoto, T. Takeuchi, M. Kiuchi, AIP Advances,Vol. 9, 025008 (2019), 2019.02, Papers

display all >>

Patents / Utility models / Designs 【 display / non-display

  • Japan, Carbon nanotube formation device, Carbon nanotube formation Method, Satoshi A. Sugimoto etal., 4919272(Registration), 2006.08, 2012.02

  • Japan, SiC film formation method, Y. Agawa, M. Kiuchi, S. Sugimoto, 4674777(Registration), 2000.08, 2011.02

  • Japan, Film formation method, Satoshi A. Sugimoto etal., 4284438(Registration), 2003.03, 2009.04

  • Japan, Surface processing method and an equipment for polymer films, and polymer films and polymeric composite films processed using the corresponding method, M. Kiuchi, S. Sugimoto, S. Goto etal., 4193040(Registration), 2003.01, 2008.10