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SUGIMOTO Satoshi
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Organization 【 display / non-display 】
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1998.05.01 - 2003.03.31, Graduate School of Engineering, Associate Professor
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2003.04.01 - 2007.03.31, Science and Technology Center for Atoms,Molecules and Ions Control, Graduate School of Engineering, Associate Professor
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2007.04.01 - 2013.03.31, Science and Technology Center for Atoms,Molecules and Ions Control, Graduate School of Engineering, Associate Professor
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2013.04.01 - 2013.04.15, Center for Atomic and Molecular Technologies, Graduate School of Engineering, Associate Professor
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2013.04.16 - , Center for Atomic and Molecular Technologies, Graduate School of Engineering, Associate Professor
Education 【 display / non-display 】
Osaka University Faculty of Engineering Graduated | 1981.03 | |
Osaka University Graduate School, Division of Engineering Completed | 1983.03 | |
Osaka University Graduate School, Division of Engineering Completed | 1986.03 |
Employment Record 【 display / non-display 】
Research associate, Osaka University | 1986.04 - 1996.06 |
Associate Professor, Osaka University | 1996.07 - 2007.03 |
Associate Professor, Osaka University | 2007.04 - |
Research topics 【 display / non-display 】
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Physical property of a hydrogen plasma and its appication
Fundamental plasma-related, Earth resource engineering, Energy sciences-related -
Development of measurent methods and control techniqes for plasma processes
Semiconductors, optical properties of condensed matter and atomic physics-related, Measurement engineering-related, Fundamental plasma-related -
Development of a processing plasma and its application
Fundamental plasma-related, Thin film/surface and interfacial physical properties-related
Academic Papers 【 display / non-display 】
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Production of low-energy fragment-ion beams from hexamethyldisiloxane and the irradiation of SiO+ ion beam to substrates with supplemental oxygen gas for SiO2 film formation, S. Yoshimura, S. Sugimoto, T. Takeuchi, M. Kiuchi, Nuclear Inst. and Methods in Physics Research, B,Vol. 479, pp. 13-17, 2020.09, Papers
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Characteristics of films deposited by the irradiation of GeCHx+ ions produced from hexamethyldigermane and their dependence on the injected ion energy, S. Yoshimura, S. Sugimoto, T. Takeuchi, K. Murai, M. Kiuchi, Nuclear Instruments and Methods in Physics Research B,Vol. 461, pp. 1-5, 2019.12, Papers
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Effects of injected ion energy on silicon carbide film formation by low-energy SiCH3+ beam irradiation, S. Yoshimura, S. Sugimoto, T. Takeuchi, K Murai, M. Kiuchi, Thin Solid Films,Vol. 685, pp. 408-413., 2019.09, Papers
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Low-energy mass-selected ion beam deposition of silicon carbide with Bernas-type ion source using methylsilane, S. Yoshimura, S. Sugimmoto, T. Takeuchi, K. Murai, M. Kiuchi, AIP Advances,Vol. 9, 095051, 2019.09, Papers
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Identification of fragment ions produced from hexamethyldigermane and the production of low-energy beam of fragment ion possessing Ge-C bond, S. Yoshimura, S. Sugimoto, T. Takeuchi, M. Kiuchi, AIP Advances,Vol. 9, 025008 (2019), 2019.02, Papers
Patents / Utility models / Designs 【 display / non-display 】
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Japan, Carbon nanotube formation device, Carbon nanotube formation Method, Satoshi A. Sugimoto etal., 4919272(Registration), 2006.08, 2012.02
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Japan, SiC film formation method, Y. Agawa, M. Kiuchi, S. Sugimoto, 4674777(Registration), 2000.08, 2011.02
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Japan, Film formation method, Satoshi A. Sugimoto etal., 4284438(Registration), 2003.03, 2009.04
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Japan, Surface processing method and an equipment for polymer films, and polymer films and polymeric composite films processed using the corresponding method, M. Kiuchi, S. Sugimoto, S. Goto etal., 4193040(Registration), 2003.01, 2008.10