Details of a Researcher

写真b

SUGIMOTO Satoshi

Keyword	plasma physics, plasma process measurement, surface treatment
URL	http://www.camt.eng.osaka-u.ac.jp/

1998.05.01 - 2003.03.31, Graduate School of Engineering, Associate Professor
2003.04.01 - 2007.03.31, Science and Technology Center for Atoms,Molecules and Ions Control, Graduate School of Engineering, Associate Professor
2007.04.01 - 2013.03.31, Science and Technology Center for Atoms,Molecules and Ions Control, Graduate School of Engineering, Associate Professor
2013.04.01 - 2013.04.15, Center for Atomic and Molecular Technologies, Graduate School of Engineering, Associate Professor
2013.04.16 - , Center for Atomic and Molecular Technologies, Graduate School of Engineering, Associate Professor

Osaka University Faculty of Engineering Graduated		1981.03
Osaka University Graduate School, Division of Engineering Completed		1983.03
Osaka University Graduate School, Division of Engineering Completed		1986.03

Research associate, Osaka University	1986.04 - 1996.06
Associate Professor, Osaka University	1996.07 - 2007.03
Associate Professor, Osaka University	2007.04 -

Physical property of a hydrogen plasma and its appication
Fundamental plasma-related, Earth resource engineering, Energy sciences-related
Development of measurent methods and control techniqes for plasma processes
Semiconductors, optical properties of condensed matter and atomic physics-related, Measurement engineering-related, Fundamental plasma-related
Development of a processing plasma and its application
Fundamental plasma-related, Thin film/surface and interfacial physical properties-related

Production of low-energy fragment-ion beams from hexamethyldisiloxane and the irradiation of SiO+ ion beam to substrates with supplemental oxygen gas for SiO2 film formation, S. Yoshimura, S. Sugimoto, T. Takeuchi, M. Kiuchi, Nuclear Inst. and Methods in Physics Research, B，Vol. 479, pp. 13-17, 2020.09, Papers
Characteristics of films deposited by the irradiation of GeCHx+ ions produced from hexamethyldigermane and their dependence on the injected ion energy, S. Yoshimura, S. Sugimoto, T. Takeuchi, K. Murai, M. Kiuchi, Nuclear Instruments and Methods in Physics Research B，Vol. 461, pp. 1-5, 2019.12, Papers
Effects of injected ion energy on silicon carbide film formation by low-energy SiCH3+ beam irradiation, S. Yoshimura, S. Sugimoto, T. Takeuchi, K Murai, M. Kiuchi, Thin Solid Films，Vol. 685, pp. 408-413., 2019.09, Papers
Low-energy mass-selected ion beam deposition of silicon carbide with Bernas-type ion source using methylsilane, S. Yoshimura, S. Sugimmoto, T. Takeuchi, K. Murai, M. Kiuchi, AIP Advances，Vol. 9, 095051, 2019.09, Papers
Identification of fragment ions produced from hexamethyldigermane and the production of low-energy beam of fragment ion possessing Ge-C bond, S. Yoshimura, S. Sugimoto, T. Takeuchi, M. Kiuchi, AIP Advances，Vol. 9, 025008 (2019), 2019.02, Papers

Japan, Carbon nanotube formation device, Carbon nanotube formation Method, Satoshi A. Sugimoto etal., 4919272(Registration), 2006.08, 2012.02
Japan, SiC film formation method, Y. Agawa, M. Kiuchi, S. Sugimoto, 4674777(Registration), 2000.08, 2011.02
Japan, Film formation method, Satoshi A. Sugimoto etal., 4284438(Registration), 2003.03, 2009.04
Japan, Surface processing method and an equipment for polymer films, and polymer films and polymeric composite films processed using the corresponding method, M. Kiuchi, S. Sugimoto, S. Goto etal., 4193040(Registration), 2003.01, 2008.10