School personnel information

写真b

ABO Satoshi


Keyword

semiconductor engineering, quantum beam engineering

Mail Address

Mail Address

Gender

Male

Organization 【 display / non-display

  • 2004.04.01 - 2005.03.31, Assistant Professor

  • 2005.04.01 - 2006.03.31, Assistant Professor

  • 2006.04.01 - 2007.03.31, Center for Quantum Science and Technology under Extreme Conditions, Assistant Professor

  • 2007.04.01 - 2007.07.31, Center for Quantum Science and Technology under Extreme Conditions, Assistant Professor

  • 2007.08.01 - 2014.03.31, Center for Quantum Science and Technology under Extreme Conditions, Assistant Professor

  • 2014.04.01 - , Center for Science and Technology under Extreme Conditions, Graduate School of Engineering Science, Assistant Professor

Education 【 display / non-display

Osaka University Faculty of Engineering Science  Graduated 1999.03
Osaka University Graduate School, Division of Engineering Science  Completed 2001.03
Osaka University Graduate School, Division of Engineering Science  Completed 2004.03

Research topics 【 display / non-display

  • semiconductor engineering, quantum beam engineering
    Electron device and electronic equipment-related, Electric and electronic materials-related

 

Academic Papers 【 display / non-display

  • Experimental verification of the origin of positive linear magnetoresistance in CoFe(V1-xMnx)Si Heusler alloys, S. Yamada, S. Kobayashi, A. Masago, L. S. R. Kumara, H. Tajiri, T. Fukushima, S. Abo, Y. Sakuraba, K. Hono, T. Oguchi, K. Hamaya, Physical Review B,100 195137, 2019.11, Papers

  • Great differences between low-temperature grown Co2FeSi and Co2MnSi films on single-crystalline oxides, Kohei Kudo, Yasunari Hamazaki, Shinya Yamada, Satoshi Abo, Yoshihiro Gohda, Kohei Hamaya, ACS Applied Electronic Materials,1 2371-2379, 2019.11, Papers

  • Tertiary electrons in single-event time-of-flight Rutherford backscattering spectrometry, Satoshi Abo, Albert Seidl, Fujio Wakaya, Mikio Takai, Nuclear Instruments and Methods in Physics Research Section B,456 12-15, 2019.10, Papers

  • Measurement of the Lateral Charge Distribution in Silicon Generated by High-Energy Ion Incidence, Satoshi Abo, Kenichi Tani, Fujio Wakaya, Shinobu Onoda, Yuji Miyato, Hayato Yamashita, Masayuki Abe, Proceedings of 22nd International Conference on Ion Implantation Technology (IIT2018), 16-21, 2019.08, Papers

  • Simulation of fine focus time-of-flight Rutherford backscattering spectrometry using TRIM backscattering data, Albert Seidl, Satoshi Abo, Mikio Takai, Nuclear Instruments and Methods in Physics Research Section B,450 163-167, 2019.07, Papers

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Conference management 【 display / non-display

  • International Conference, 11th International Conference on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11), Executive Committee, 2015.11

  • International Conference, 10th International Conference on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10), Executive Committee, 2012.12

  • International Conference, The 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Application(9thRASEDA), Executive Committee, 2010.10