School personnel information

写真b

KITAOKA Yasuo


Mail Address

Mail Address

Gender

Male

Organization 【 display / non-display

  • 2006.04.01 - 2010.03.31, Frontier Research Center, Graduate School of Engineering, Professor

  • 2010.04.01 - 2010.09.30, Continuing Professional Development Center, Graduate School of Engineering, Professor

  • 2014.04.01 - 2015.03.31, Continuing Professional Development Center, Graduate School of Engineering, Professor

  • 2015.04.01 - 2017.03.31, Office for University-Industry Collaboration, Professor

  • 2017.04.01 - 2019.08.31, Office for Industry-University Co-Creation, Professor

  • 2019.09.01 - , Co-Creation Bureau, Professor

  • 2015.04.01 - , Continuing Professional Development Center, Professor

Education 【 display / non-display

Osaka University Faculty of Engineering  Graduated 1989.03
Osaka University Graduate School, Division of Engineering  Completed 1991.03
Osaka University Graduate School, Division of Engineering  1999.09

Employment Record 【 display / non-display

Office of Universityu-Industry Collaboration Duputy Director 2015.04 - 2019.08

Research topics 【 display / non-display

  • Electric and electronic materials-related

Academic Society Membership 【 display / non-display

  • Japanese Society for Engineering Educaion

 

Academic Papers 【 display / non-display

  • Liquid phase epitaxy growth of m-plane GaN substrate using the Na flux method, T.Iwahashi, Y.Kitaoka, F.Kawamura, M.Yoshimura, Y.Mori, T.Sasaki, R.Armitage, and H.Hirayama, Japanese Journal of Applied Physics,Vol.46, No.10, P227-229, 2007.03, Papers

  • Intense Terahertz Radiation from InAs Thin Films, S. Sasa, S. Umino, Y. Ishibashi, T. Maemoto, M. Inoue, K. Takeya, and M. Tonouchi, Journal of Infrared, Millimeter, and Terahertz Waves,Vol.49 pp.075502, 2010.08, Papers

  • Growth of bulk GaN and AlN: progress and challenges, V. Avrutin, D.J. Silversmith, Y. Mori, F. Kawamura, Y. Kitaoka, and H. Morkoc, Proceedings of the IEEE,Vol.98, Issue 7, pp.1302-1315, 2010.07, Papers

  • Growth of large GaN single cryatals on high-quality GaN seed by cabon-addede Na flux method, M. Imade, Y. Hirabayashi, Y. Konishi, H. Ukegawa, N. Miyoshi, M. Yoshimura, T.Sasaki, Y. Kitaoka, and Y. Mori, Applied Physics Express,Vol.3, pp.075501-1-3, 2010.06, Papers

  • Characterization of CsLiB6O10 Crystal Grown in a Dry Atmosphere, T. Kawamura, Y. Shimizu, M. Yoshimura, Y. Fukushima, M. Nishioka, Y. Kaneda, Y. Kitaoka, Y. Mori, and T. Sasaki, Japanese Journal of Applied Physics,Vol.49, pp065502-1-4, 2010.06, Papers

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Books 【 display / non-display

  • Special, Bulk Single Crystals of Group III Nitride Substrates and Lattice-Matched Substrates for High Performance Nitride-Based Devices, ISBN, 978-4-7813-0133-4, 2009.10