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FUJIWARA Yasufumi
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Organization 【 display / non-display 】
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2003.07.01 - 2005.03.31, Graduate School of Engineering, Professor
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2005.04.01 - , Division of Materials and Manufacturing Science, Graduate School of Engineering, Professor
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2013.06.01 - , Institute for Academic Initiatives, Professor
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2015.04.01 - , Gender Equality Promotion Office
Education 【 display / non-display 】
Osaka University Faculty of Engineering Science Graduated | Bachelor of Engineering | 1981.03 |
Osaka University Graduate School, Division of Engineering Science Completed | Master of Engineering | 1983.03 |
Osaka University Graduate School, Division of Engineering Science Unfinished | Doctor of Engineering | 1985.07 |
Employment Record 【 display / non-display 】
Research Asociate, Osaka University (School of Engieering Science) | 1985.08 - 1991.01 |
Lecturer, Osaka University (School of Engineering Science) | 1991.01 - 1993.03 |
Asociate Professor, Nagoya University (School of Engineering) | 1993.04 - 1997.03 |
Visiting Associate Professor, University of Illinois at Urbana-Champaign (Electrical and Computer Engineering) | 1995.11 - 1996.01 |
Asociate Professor, Nagoya University (Graduate School of Engineering) | 1997.04 - 2003.06 |
Professor, Osaka University (Graduate School of Engineering) | 2003.07 - |
Visiting Lecturer, Graduate School of Engineering, Nagoya University | 2003.07 - 2004.03 |
Guest Professor, Tokyo University of Science | 2006.04 - 2011.03 |
Research topics 【 display / non-display 】
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Applied physical properties-related, Electric and electronic materials-related
Academic Society Membership 【 display / non-display 】
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Japanese Society of Applied Physics
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Japan Institute of Metals
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The Vacuum Society of Japan
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The Laser Society of Japan
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The Rare Earth Society of Japan
Academic Papers 【 display / non-display 】
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Evaluations of Selective Dry Etching of GaAs Core Layer Having Embedded InAs Quantum Dots Using Optical Measurements towards Photonic Crystal Laser Fabrication, T. Okunaga, T. Nozue, Y. Xiong, H. Kajii, M. Morifuji, J. Tatebayashi, Y. Fujiwara, T. Nishihashi, M. Kondow,THE 27th INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD2020), 2020.09, Conference Report / Oral Presentation
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Enhancement of Er luminescence in microdisk resonators with Er,O-codoped GaAs, R. Higashi, M. Ogawa, J. Tatebayashi, N. Fujioka, D. Timmerman, S. Ichikawa, and Y. Fujiwara, Journal of Applied Physics,127, 23, 233101., 2020.06, Papers
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Quantitative evaluation of enhanced Er luminescence in GaAs-based two-dimensional photonic crystal nanocavities, M. Ogawa, J. Tatebayashi, N. Fujioka, R. Higashi, M. Fujita, S. Noda, D. Timmerman, S. Ichikawa, and Y. Fujiwara, Applied Physics Letters,116, 18, 181102, 2020.05, Papers
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Excitation Efficiency and Limitations of the Luminescence of Eu3+ Ions in GaN, 88. D. Timmerman, B. Mitchell, S. Ichikawa, J. Tatebayashi, M. Ashida, and Y. Fujiwara, Physical Review Applied,13 014044, 2020.04, Papers
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Room-temperature operation of near-infrared light emitting diode based on Tm-doped GaN with ultra-stable emission wavelength, S. Ichikawa, N. Yoshioka, J. Tatebayashi, and Y. Fujiwara, Journal of Applied Physics,127, 11, 113103, 2020.03, Papers
Books 【 display / non-display 】
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Special, Woodhead Publishing Series in Electronic and Optical Materials: Number 87, Rare Earth and Transition Metal Doping of Semiconductor Materials; Synthesis, Magnetic Properties and Room Temperature Spintronics (Chapter 5), H. Ohta, S. Okubo, and Y. Fujiwara, Elsevier, Duxford, UK, ISBN, 978-0-08-100041-0, 2016.04
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Special, Woodhead Publishing Series in Electronic and Optical Materials: Number 87, Rare Earth and Transition Metal Doping of Semiconductor Materials; Synthesis, Magnetic Properties and Room Temperature Spintronics (Chapter 8), A. Koizumi, B. Mitchell, V. Dierolf, and Y. Fujiwara, Elsevier, Duxford, UK, 2016.04
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Other, Special Issue: Electronic Materials and Nanotechnology for Green Environment, Japanese Journal of Applied Physics 52 (2013), J. Motohisa, Y. Fujiwara, M. Sugiyama, K. Yase, and S.-K. Joo, Japanese Journal of Applied Physics, 2013.10
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Special, Progress in Advanced Structural and Functional Materials Design, Y. Fujiwara, Y. Terai, and A. Nishikawa, Springer, ISBN, 978-4-431-54063-2, 2013.01
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Special, Materials Research Society Symposium Proceedings Vol. 1342, Rare-Earth Doping of Advanced Materials for Photonic Applications, V. Dierolf, Y. Fujiwara, T. Gregorkiewicz, and W. M. Jadwisienczak, Cambridge University Press, ISBN, 978-1-60511-319-7, 2012.03
Awards 【 display / non-display 】
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第32回応用物理学会論文賞, A. Nishikawa, T. Kawasaki, N. Furukawa, Y. Terai, and Y. Fujiwara, The Japan Society of Applied Physics, 2010.09
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Grobal COE Program "Advanced Structural and Functional Materials Design" Paper Award, Y. Terai, K. Hidaka, K. Fujii, S. Takemoto, M. Tonouchi and Y. Fujiwara, Graduate School of Engineering, Osaka University, 2009.03
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Academic Prize, The NAGAI Foundation for Science and Technology, Yasufumi FUJIWARA, The NAGAI Foundation for Science and Technology, 2002.03
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ECO-MATES 2011 Promotion Award, T. Tsuji, Y. Terai, M. H. Kamarudin, and Y. Fujiwara, International Symposium on Materials Science and Innovation for Sustainable Society, 2011.11
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Student Poster Award, R. Wakamatsu, A. Nishikawa, D. Lee, Y. Terai, and Y. Fujiwara, 2011.11
Conference management 【 display / non-display 】
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National Conference, 38th Electronic Materials Symposium (EMS38), 2019.10
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International Conference, International Symposium on Compound Semiconductors 2019 (ISCS2019), Steering Committee Vice Chair, 2019.05
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International Conference, International Conference on Nano-photonics and Nano-optoelectronics (ICNN2019), Organizing Committee Member, 2019.04
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International Conference, 11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, 12th International Conference on Plasma-Nano Technology & Science (ISPlasma 2019/IC-PLANTS2019), Program Committee Member & Editorial Committee Member, 2019.03
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International Conference, International Workshop on Nitride Semiconductors 2018 (IWN 2018) , Steering Committee Member, 2018.11