School personnel information

写真b

WATANABE Heiji


Keyword

Surface Science Device process

Mail Address

Mail Address

URL

http://www-asf.mls.eng.osaka-u.ac.jp/

Gender

Male

Organization 【 display / non-display

  • 2004.05.01 - 2006.10.31, Division of Precision Science & Technology and Applied Physics, Graduate School of Engineering, Associate Professor

  • 2006.11.01 - 2020.03.31, Division of Science and Biotechnology, Graduate School of Engineering, Professor

  • 2020.04.01 - 2020.04.30, ., Graduate School of Engineering, Professor

  • 2020.05.01 - , ., Graduate School of Engineering, Professor

Education 【 display / non-display

Osaka University Faculty of Engineering  Graduated 1988.03
Osaka University Graduate School, Division of Engineering  Completed 1990.03
Osaka University Graduate School, Division of Engineering Science  1994.02

Employment Record 【 display / non-display

NEC Corporation 1990.04 - 1994.02
JRCAT 1994.02 - 1998.02
NEC Corporation 1998.02 - 2000.07
Osaka University 2004.05 - 2006.10
 

Academic Papers 【 display / non-display

  • Voids and vacancy-type defects in SiO2/GaN structures probed by monoenergetic positron beams, Akira Uedono, Wataru Ueno, Takahiro Yamada, Takuji Hosoi, Werner Egger, Tönjes Koschine, Christoph Hugenschmidt, Marcel Dickmann, and Heiji Watanabe, Journal of Applied Physics,Volume 127, Issue 5, 2020.02, Papers

  • Comprehensive and systematic design of metal/high-k gate stack for high-performance and highly reliable SiC power MOSFET, Takuji Hosoi, Shuji Azumo, Yusaku Kashiwagi, Shigetoshi Hosaka, Kenji Yamamoto, Masatoshi Aketa, Hirokazu Asahara, Takashi Nakamura, Tsunenobu Kimoto, Tayoshi Shimura, and Heiji Watanabe, Japanese Journal of Applied Physics,Volume 59, Number 2, 2020.01, Papers

  • Highly Efficient Room Temperature Electroluminescence from GeSn Lateral PIN Diode Fabricated by Liquid-phase Crystallization,電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理― (第25回研究会) , 65-68, 2020.01, Conference Report / Oral Presentation (In Japanese)

  • Solid-phase Grown GeSn n-MOSFETs on GOI Wafer Fabricated by Flash Lamp Annealing,電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理― (第25回研究会) , 121-124, 2020.01, Conference Report / Oral Presentation (In Japanese)

  • The Role of Oxygen Ambient Anneal for Ba-incorporated SiO2/SiC Interface, 寺尾 豊, 辻 英徳, 細井 卓治, 張 旭芳, 矢野 裕司, 志村 考功, 渡部 平司,電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理― (第25回研究会) , 137-139, 2020.01, Conference Report / Oral Presentation

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Awards 【 display / non-display

  • The 4th Presidential Awards for Achievement in Research, Osaka University, Heiji Watanabe, Osaka University, 2015.07

  • The 3rd Presidential Awards for Achievement in Research, Osaka University, Heiji Watanabe, Osaka University, 2014.07

  • 2011 Osaka University Achievement Awards in Research, Heiji Watanabe, Osaka University, 2011.07

  • 2008 IWDTF Best Poster Award, T. Shimura, Y. Okamoto, T. Inoue, T. Hosoi, H. Watanabe , The Japan Society of Applied Physics, Japan, 2008.11