School personnel information

写真b

WATANABE Heiji


Keyword

Surface Science Device process

Mail Address

Mail Address

URL

http://www-asf.mls.eng.osaka-u.ac.jp/

Gender

Male

Organization 【 display / non-display

  • 2004.05.01 - 2006.10.31, Division of Precision Science & Technology and Applied Physics, Graduate School of Engineering, Associate Professor

  • 2006.11.01 - 2020.03.31, Division of Science and Biotechnology, Graduate School of Engineering, Professor

  • 2020.04.01 - , ., Graduate School of Engineering, Professor

Education 【 display / non-display

Osaka University Faculty of Engineering  Graduated 1988.03
Osaka University Graduate School, Division of Engineering  Completed 1990.03
Osaka University Graduate School, Division of Engineering Science  1994.02

Employment Record 【 display / non-display

NEC Corporation 1990.04 - 1994.02
JRCAT 1994.02 - 1998.02
NEC Corporation 1998.02 - 2000.07
Osaka University 2004.05 - 2006.10
 

Academic Papers 【 display / non-display

  • Toward the Super Temporal Resolution Image Sensor with a Germanium Photodiode for Visible Light, Nguyen Hoai Ngo, Anh Quang Nguyen, Fabian M. Bufler, Yoshinari Kamakura, Hideki Mutoh, Takayoshi Shimura, Takuji Hosoi, Heiji Watanabe, Philippe Matagne, Kazuhiro Shimonomura, Kohsei Takehara, Edoardo Charbon and Takeharu Goji Etoh, Sensors,Volume 20, Issue 23, 2020.12, Papers

  • Physical Origins of Anomalous Fixed Charges at the SiO2/GaN Interface Generated by Forming Gas Annealing,先進パワー半導体分科会 第7回講演会, 2020.12, Conference Report / Oral Presentation (In Japanese)

  • 4H-SiC CMOS inverters fabricated by ultrahigh-temperature gate oxidation and forming gas annealing, Kidist Moges, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe,先進パワー半導体分科会 第7回講演会, 2020.12, Conference Report / Oral Presentation

  • Defect engineering in SiC technology for high-voltage power devices, Tsunenobu Kimoto and Heiji Watanabe, Applied Physics Express,13(12) 120101-1-120101-44, 2020.11, Papers

  • Anomalous interface fixed charge generated by forming gas annealing in SiO2/GaN MOS devices, Hidetoshi Mizobata, Yuhei Wada, Mikito Nozaki, Takuji Hosoi, Takayoshi Shimura, and Heiji Watanabe, Applied Physics Express,Volume 13, Number 8, 2020.07, Papers

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Awards 【 display / non-display

  • The 4th Presidential Awards for Achievement in Research, Osaka University, Heiji Watanabe, Osaka University, 2015.07

  • The 3rd Presidential Awards for Achievement in Research, Osaka University, Heiji Watanabe, Osaka University, 2014.07

  • 2011 Osaka University Achievement Awards in Research, Heiji Watanabe, Osaka University, 2011.07

  • 2008 IWDTF Best Poster Award, T. Shimura, Y. Okamoto, T. Inoue, T. Hosoi, H. Watanabe , The Japan Society of Applied Physics, Japan, 2008.11