School personnel information

写真b

ASAHI Hajime


Keyword

III-V semicondcutors, MBE, Optoelectronics, Spintronics, Nanotechnology

Mail Address

Mail Address

URL

http://www.sanken.osaka-u.ac.jp/labs/pem/

Gender

Male

Organization 【 display / non-display

  • 2001.07.01 - 2012.03.31, The Institute of Scientific and Industrial Research, Professor

  • 2012.04.01 - , The Institute of Scientific and Industrial Research, Specially Appointed Professor

Education 【 display / non-display

The University of Tokyo Faculty of Engineering  Graduated 1971.06
The University of Tokyo Graduate School, Division of Engineering  Completed 1973.03
The University of Tokyo Graduate School, Division of Engineering  Completed 1976.03

Employment Record 【 display / non-display

Research Staff Engineer, Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation 1976.04 - 1983.03
Senior Staff Engineer, Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation 1983.04 - 1985.03
Senior Staff Engineer, NTT Atsugi Electrical Communications Laboratoriers 1985.04 - 1987.03
Associate Professor, ISIR, Osaka University 1987.04 - 2001.07
Professor, ISIR, Osaka University 2001.07 - 2012.03

Research topics 【 display / non-display

  • Study on nanocharacterization of quantum materials and quantum devices
    Applied physical properties-related

  • Semiconductor quantum nano-structures and their device application
    Applied physical properties-related

  • Polycrystalline III-V nitride semicondcutors and their device application
    Applied physical properties-related

  • Tl-containing temperature-independent bandgap semicondutors and their device application
    Applied physical properties-related

  • Synthesis of new magnetic semiconductors and their application to semicondcutor spintronics devices
    Applied physical properties-related

 

Academic Papers 【 display / non-display

  • MBE growth of TlInGaAs/TlInP/InP SCH LD structures and their laser operation with low temperature variation of lasing wavelength, A. Fujiwara, D. Krishnamurthy, T. Matsumoto, S. Hasegawa and H. Asahi, J. Cryst. Growth,301-302, 109-112, 2007.02, Papers

  • Tunnel magnetoresistance in GaCrN/AlN/GaCrN ferromagnetic semiconductor tunnel junctions, M.S. Kim, Y.K. Zhou, M. Funakoshi, S. Emura, S. Hasegawa, H. Asahi, Appl. Phys. Lett.,89 (23) 232511-1 - 232511-3, 2006.12, Papers

  • Observation of small temperature variation of longitudinal-mode peak wavelength in TlInGaAs/InP laser diodes, A. Fujiwara, H.J. Lee, A. Imada, S. Hasegawa and H. Asahi, Jpn. J. Appl. Phys. 42 (11B) (2003) L1359-L1361.,42 (11B) L1359-L1361, 2003.11, Papers

  • High temperature (>400K) ferromagnetism in III-V-based diluted magnetic semiconductor GaCrN grown by ECR molecular beam epitaxy, Masahiko Hashimoto, Yi-Kai Zhou, Masahito Kanamura and Hajime Asahi, Solid State Com. 122 (1-2) (2002) 37-39,122 (1-2) 37-39, 2002.01, Papers

  • Current injection laser operation of GaAs/InAs short-period superlattice/InP(411) quantum dot laser diodes with InAlAs current blocking layer, T. Shimada, S. Hasegawa and H. Asahi, Jpn. J. Appl. Phys.,44(21), L655-L657, 2005.05, Papers

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Books 【 display / non-display

  • Special, Practical Thin Film Process, H. Asahi, Technology & Education Publishers, 2009.08

  • Special, Photonics Based on Wavelength Integration and Manipulation, H. Asahi and S. Hasegawa, The Institute of Pure and Applied Physics, 2005.02

  • Special, Encyclopedia of Nanoscience and Nanotechnology, S. Gonda and H. Asahi, Marcel Dekker, Inc., 2004.03

  • Special, New version: Handbook of synthesis and characterization of thin films and their application, H. Asahi, NTS, 2003.04

  • Special, Crystal Growth Dictionary, H. Asahi, Kyouritsu-Shuppan, 2001.05

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Patents / Utility models / Designs 【 display / non-display

  • Japan, Semiconductor laser diodes, K. Oe and H. Asahi, 特願平 8-22376(Application), 1998.08

  • Japan, Electron emmsion cathod and display device, M. Fudeta and H. Asahi, 特開2003-242876(Publication), 2002.02

  • Japan, Semiconductor laser diodes, H. Asahi and Y.K. Zhou, 特願2002-074499(Application), 2002.03

  • Japan, Fabrication method for compound semicondcutor devices, N. Okamoto, H. Tanaka and H. Asahi, 特願平 9-(Registration), 1998.08

  • Japan, Semiconductor laser diodes, K. Oe and H. Asahi, 特願平 9-156527(Registration), 1997.08

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Awards 【 display / non-display

  • Osaka University Achievement Award in Research, H. Asahi, Osaka University, 2011.08

  • IPRM Award, Hajime ASAHI, IEEE Photonics Society, 2010.06

  • Fellow, Japan Society of Applied Physics, Hajime Asahi, Japan Society of Applied Physics, 2008.09

  • JJAP Editorial Contribution Award, Hajime Asahi, The Japan Society of Applied Physics, 2008.04

  • Best Paper Award, Y.K. Zhou, S.W. Choi, S. Kimura, S. Emura, S. Hasegawa and H. Asahi, 3rd IUMRS International Conference in Asia, 2006.09