School personnel information

写真b

NAKAMURA Yoshiaki


Keyword

Nanoscience, Quantum dots, Semiconductorss, thermoelectric materials, molecular beam epitaxy

URL

http://www.adv.ee.es.osaka-u.ac.jp/

Organization 【 display / non-display

  • 2008.10.01 - 2015.03.31, Department of Systems Innovation, Graduate School of Engineering Science, Associate Professor

  • 2015.04.01 - , Department of Systems Innovation, Graduate School of Engineering Science, Professor

Education 【 display / non-display

The University of Tokyo Faculty of Engineering Department of Applied Physics Graduated 1997.03
The University of Tokyo Graduate School, Division of Engineering Department of Applied Physics Completed 1999.03
The University of Tokyo Graduate School, Division of Engineering Department of Applied Physics Completed 2002.03

Employment Record 【 display / non-display

The University of Tokyo Research Associate 2002.04 - 2007.03
The University of Tokyo Research Associate 2007.04 - 2008.09
Osaka University Associate Professor 2008.10 - 2015.03

Academic Society Membership 【 display / non-display

  • The Japan Society of Applied Physics

  • The Surface Science Society of Japan

  • The Physical Society of Japan

 

Academic Papers 【 display / non-display

  • Epitaxial Growth of High Quality Ge Films on Si(001) Substrates by Nanocontact Epitaxy, Yoshiaki Nakamura, Akiyuki Murayama, and Masakazu Ichikawa, Crystal Growth & Design,11, 3301, 2011.06, Papers

  • Nanocontact heteroepitaxy of thin GaSb and AlGaSb films on Si substrates using ultrahigh-density nanodot seeds, Yoshiaki Nakamura, Takafumi Miwa and Masakazu Ichikawa, Nanotechnology,22 265301, 2011.05, Papers

  • Self-organized formation and self-repair of a two-dimensional nanoarray of Ge quantum dots epitaxially grown on ultrathin SiO2-covered Si substrates, Yoshiaki Nakamura, Akiyuki Murayama, Ryoko Watanabe, Tomokazu Iyoda and Masakazu Ichikawa, Nanotechnology,21 095305, 2010.02, Papers

  • Observation of the quantum-confinement effect in individual Ge nanocrystals on oxidized Si substrates using scanning tunneling spectroscopy, Yoshiaki Nakamura, Kentaro Watanabe, Yo Fukuzawa, and Masakazu Ichikawa, Appl. Phys. Lett. 87, 13, 133119-1-3., 2005.09, Papers

  • (Invited) High density Iron silicde nanodots formed by ultrathin SiO2 film technique, Yoshiaki Nakamura, IUMRS-ICA 2011, Taipei, September, 2011, 2011.09, International Conference(Proceedings)

display all >>

Books 【 display / non-display

  • Special, Nanostructuers of Silicide-based semiconductors (Chapter 3.7), Yoshiaki nakamura, Shokabo, ISBN, 978-4-7853-2920-4, 2014.09

Patents / Utility models / Designs 【 display / non-display

  • Japan, Formation method of ferromagnetic devices of iron silicide, Yoshiaki Nakamura, Masakazu Ichikawa, Kenjiro Fukuda, 特開2009-26847(Publication), 2007.07

  • Japan, Formation method of semiconductor GeSn, Yoshiaki Nakamura, Masakazu Ichikawa, Akiko Masada, 特開2007-294778(Publication), 2006.04

  • Japan, Process technology of semiconductor devices, Masakazu Ichikawa, Yoshiaki Nakamura, 特開2005-303249(Publication), 2004.03

Awards 【 display / non-display

  • Young scientist award at 9th international workshop on Desorption Induced by Electronic Transitions, Yoshiaki Nakamura, The organizier of 9th international workshop on Desorption Induced by Electronic Transitions, 2002.02