School personnel information

写真b

MORI Yusuke


Mail Address

Mail Address

URL

http://crystal.pwr.eng.osaka-u.ac.jp/

Gender

Male

Organization 【 display / non-display

  • 2000.11.01 - 2005.03.31, Graduate School of Engineering, Associate Professor

  • 2005.04.01 - 2007.03.31, Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Associate Professor

  • 2007.04.01 - 2007.04.30, Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Associate Professor

  • 2007.05.01 - , Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Professor

Education 【 display / non-display

Osaka University Faculty of Engineering  Graduated 1989.03
Osaka University Graduate School, Division of Engineering  Completed 1991.03
Osaka University Graduate School, Division of Engineering  Unfinished 1993.03
 

Academic Papers 【 display / non-display

  • Effect of methane additive on GaN growth using the OVPE method, Akira Kitamoto, Junichi Takino, Tomoaki Sumi, Masahiro Kamiyama, Shintaro Tsuno, Keiju Ishibashi, Yoshikazu Gunji, Masayuki Imanishi, Yoshio Okayama, Masaki Nobuoka, Masashi Isemura, Masashi Yoshimura and Yusuke Mori, Japanese Journal of Applied Physics,Vol.58, No.SC, pp.SC1021-1/5, 2019.05, Papers

  • Quantitative analysis of lattice plane microstructure in the growth direction of a modified Na-flux GaN crystal using nanobeam X-ray diffraction, Kazuki Shida, Nozomi Yamamoto, Tetsuya Tohei, Masayuki Imanishi, Yusuke Mori, Kazushi Sumitani, Yasuhiko Imai, Shigeru Kimura, Akira Sakai, Japanese Journal of Applied Physics,58(SC) SCCB16-1-SCCB16-6, 2019.05, Papers

  • Correlation between current leakage and structural properties of threading dislocations in GaN bulk single crystals grown using a Na-flux method , Takeaki Hamachi, Tetsuya Tohei, Masayuki Imanishi, Yusuke Mori, Akira Sakai, Japanese Journal of Applied Physics,58 SCCB23-1-SCCB23-6, 2019.05, Papers

  • Development of a 2-inch GaN wafer by using the oxide vapor phase epitaxy method, Junichi Takino, Tomoaki Sumi, Yoshio Okayama, Masaki Nobuoka, Akira Kitamoto, Msayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Japanese Journal of Applied Physics,Vol.58, No.SC, pp.SC1043-1/6, 2019.05, Papers

  • Evaluation of dislocations under the electrodes of GaN pn diodes by X-ray topography, Masakazu Kanechika, Satoshi Yamaguchi, Masayuki Imanishi, and Yusuke Mori, Japanese Journal of Applied Physics,Vol.58, No.SC, pp.SCCD22-1/4 , 2019.05, Papers

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Books 【 display / non-display

  • Special, Nonlinear Optical Borate Crystals, M. Yoshimura, T. Sasaki, and Y. Mori, Wiley-VCH, ISBN, 978-3-527-41009-5, 2012.04

  • Special, Bulk Single Crystals of Group III Nitride Substrates and Lattice-Matched Substrates for High Performance Nitride-Based Devices, ISBN, 978-4-7813-0133-4, 2009.10

  • Special, Advanced Growth Technology and Application of Bulk Single Crystal, ISBN, 978-4-88231-535-3, 2006.03

  • Special, Recent Advances in Research and Development of Organic Crystalline Materials, ISBN, 978-4-88231-536-0, 2005.12

  • Special, Crystal Growth Technology, Editors Hans J. Scheel and T. Fukuda, Chapter 20, "Growth of nonlinear-optical crystals for laser-frequency conversion", T. Sasaki, Y. Mori, and M. Yoshimura, John Wiley & Suns, 2003.10

Patents / Utility models / Designs 【 display / non-display

  • United States, Optical wavelength conversion element having a cesium-lithium-borate crystal, M. Yoshimura, T. Sasaki, Y. Mori, M. Nishioka, T. Katsura, T. Kojima, and J. Nishimae, (US)7,948,673(Registration), 2008.09, 2011.05

  • United States, Method for producing borate-based crystal and laser oscillation apparatus, T. Sasaki, Y. Mori, M. Yoshimura, M. Nishioka, S. Fukumoto, T. Matsui, and T. Saji, (US)7,744,696(Registration), 2004.02, 2010.06

  • ロシア, Method for producing borate-based crystal and laser oscillation apparatus, SASAKI Takatomo,MORI Yusuke,YOSHIMURA Masashi, NISHIOKA Muneyuki,FUKUMOTO Satoru, MATSUI Tomoyo,SAJI Takashi, (RU)2338817(Registration), 2004.02, 2008.11

  • 中国, Method for producing borate-based crystal and laser oscillation apparatus, (CN)ZL200480004188.1(Registration), 2004.02, 2008.01

  • Japan, Nonlinear optical crystal, Takatomo Sasaki, Yusuke Mori, Masashi Yoshimura, Zhang-gui Hu, 特許3819710(Registration), 1999.08, 2006.06

Awards 【 display / non-display

  • 2012JACGAwards, 2012.11

  • Prizes for Science and Technology(Research Category), The Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology, Takatomo Sasaki, Yusuke Mori, and Masashi Yoshimura, Ministry of Education, Culture, Sports, Science and Technology, 2007.04

  • Prize of Laser Engineering; Medal of Excellent Review Paper, Hiroaki Adachi, Youichiroh Hosokawa, Hiroshi Masuhara, Masashi Yoshimura, Yusuke Mori, and Takatomo Sasaki, The Laser Society of Japan, 2005.05