School personnel information

写真b

SAKAI Akira


URL

http://www.nano.ee.es.osaka-u.ac.jp/

Gender

Male

Organization 【 display / non-display

  • 2007.04.01 - , Department of Systems Innovation, Graduate School of Engineering Science, Professor

Education 【 display / non-display

Nagoya University Faculty of Engineering  Graduated 1984.03
Nagoya University Graduate School, Division of Engineering  Completed 1986.03
Nagoya University Graduate School, Division of Engineering  1996.07

Employment Record 【 display / non-display

NEC Fundamental Res. Labs. 1986.04 - 1998.06

Research topics 【 display / non-display

  • Applied physical properties-related, Thin film/surface and interfacial physical properties-related, Electric and electronic materials-related

Academic Society Membership 【 display / non-display

  • Electrochemical Society

  • Materials Research Society

 

Academic Papers 【 display / non-display

  • Gate tuning of synaptic functions based on oxygen vacancy distribution control in four-terminal TiO2−x memristive devices, Zenya Nagata, Takuma Shimizu, Tsuyoshi Isaka, Tetsuya Tohei, Nobuyuki Ikarashi, Akira Sakai, Scientific Reports,9 10013-1-10013-7, 2019.07, Review Papers

  • Quantitative analysis of lattice plane microstructure in the growth direction of a modified Na-flux GaN crystal using nanobeam X-ray diffraction, Kazuki Shida, Nozomi Yamamoto, Tetsuya Tohei, Masayuki Imanishi, Yusuke Mori, Kazushi Sumitani, Yasuhiko Imai, Shigeru Kimura, Akira Sakai, Japanese Journal of Applied Physics,58 SCCB16-1-SCCB16-6, 2019.05, Papers

  • Correlation between current leakage and structural properties of threading dislocations in GaN bulk single crystals grown using a Na-flux method , Takeaki Hamachi, Tetsuya Tohei, Masayuki Imanishi, Yusuke Mori, Akira Sakai, Japanese Journal of Applied Physics,Vol.58, No.SC, pp.SCCB23-1/6, 2019.05, Papers

  • Local current leakage at threading dislocations in GaN bulk single crystals grown by a modified Na-flux method , Takeaki Hamachi, Tetsuya Tohei, Masayuki Imanishi, Yusuke Mori, Akira Sakai, Japanese Journal of Applied Physics,58 050918-1-050918-4, 2019.04, Papers

  • Demonstrative operation of four-terminal memristive devices fabricated on reduced TiO2 single crystals, Shotaro Takeuchi, Takuma Shimizu, Tsuyoshi Isaka, Tetsuya Tohei, Nobuyuki Ikarashi, Akira Sakai, Scientific Reports,9 2601-1-2601-9, 2019.02, Papers

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Books 【 display / non-display

  • Special, Modern Surface Science Series Vol.4, Akira Sakai, Kyoritsu Shuppan, 2011.09

  • Special, Silicon-germanium (SiGe) nanostructures Production, properties and applicaitons in electronics; Chapter 5 Silicon-germanium (SiGe) crustal growth using molecular beam epitaxy, A. Sakai, Woodhead Publishing Limited, 2011.03

  • Special, III-Nitride Semiconductors: Growth (Optoelectronic Properties of Semiconductors and Superlattices), A. Sakai, A. Usui, M. O. Manasreh, I. T. Ferguson, Taylor & Francis, New York, 2002.01

  • Special, Springer Series in Materials Science 17, Ordering at Surfaces and Interfaces, A. Sakai, T. Tatsumi, K. Ishida, Springer-Verlag, 1992.01

Patents / Utility models / Designs 【 display / non-display

  • United States, Substrate for epitaxial growth, process for producing the same, and multi-layered film structure, A. Sakai, N. Taoka, O. Nakatsuka, S. Zaima, Y. Yasuda, 11/088766(Application), 2005.03

  • United States, Method for fabricating a silicon nanocrystal, silicon nanocrystal, method for fabricating a floating gate type memory capacitor structure, and floating gate type memory capacitor structure, H. Kondo, Y. Yasuda, S. Zaima, A. Sakai, M. Sakashita, S. Naito, M. Satake, 10/925966(Application), 2004.08

  • EP(ベルギー, ドイツ, フランス, イギリス), Method for fabricating a silicide film, multilayered intermediated structure and multilayered structure, O. Nakatsuka, A. Sakai, S. Zaima, Y. Yasuda, K .Okubo, Y. Tsuchiya, 4020632(Application), 2004.08

  • United States, Method for fabricating a silicide film, multilayered intermediated structure and multilayered structure, O. Nakatsuka, A. Sakai, S. Zaima, Y. Yasuda, K .Okubo, Y. Tsuchiya, 10/925976(Application), 2004.08

  • United States, Method for fabricating a metallic oxide of high dielectric constant, metallic oxide of high dielectric constant, gate insulating film and semiconductor element, A. Sakai, Y. Yasuda, S. Zaima, M. Sakashita, H. Kondo, S. Sakashita, US7030000(Registration), 2004.03, 2006.04

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Awards 【 display / non-display

  • JJAP Editorial Contribution Award, Akira Sakai, The Japan Society of Applied Physics, 2007.04

  • The 3rd P&I Patent Contest Patent of the Year 2006 Process Technology Division, S. Zaima, Y. Yasuda, A. Sakai, O. Nakatsuka, Y. Tsuchiya, Tokyo Institute of Technology, 2006.11

  • MNC (Microprocesses and Nanotechnology Conference) 2004 Award for Outstanding Paper, S. Naito, T. Ueyama, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima, Microprocesses and Nanotechnology Conference, 2005.10

  • Best Poster Presentation Award at 1998 Materials Research Society Fall Meeting, T. Ide, A. Sakai, K. Shimizu, Materials Research Society, 1998.11