School personnel information

写真b

TERAKAWA Sumio


Organization 【 display / non-display

  • 2004.04.01 - 2006.03.31, The Institute of Scientific and Industrial Research, Specially Appointed Professor

  • 2006.04.01 - 2007.03.31, The Institute of Scientific and Industrial Research, Specially Appointed Researcher

  • 2007.04.01 - 2015.03.31, The Institute of Scientific and Industrial Research, Specially Appointed Professor

  • 2015.10.01 - , The Institute of Scientific and Industrial Research, Specially Appointed Professor

 

Academic Papers 【 display / non-display

  • Fabrication of Si Nanoparticles from Si Swarf and Application to Photovoltaic Cells, M. Maeda, T. Matsumoto, S. Terakawa, S. Imai, H. Kobayashi,2012 RCIQE International Seminar,March 5-6, 2012 Conference Hall, Hokkaido University, 2012.05, International Conference(Non Proceeding)

  • Ultra-low power thin film transistors with ultrathin gate oxide layer fabricated by the NAOS (Nitric Acid Oxidation of Si) method and application to mobile electronic devices, T. Matsumoto, Y. Kubota, M. Yamada, H. Tsuji, K. Taniguchi, S. Imai, S. Terakawa, H. Kobayashi,The 15th SANKEN International Symposium and the 10th SANKEN Nanotechnology Symposium,Jan12-13,2012,Japan, 2012.01, International Conference(Non Proceeding)

  • Ultra-low power thin film transisitors and liquid crystal displays with ultrathin gate oxide layer fabricated by the NAOS (Nitric Acid Oxidation of Si) method, T. Matsumoto, Y. Kubota, M. Yamada, H. Tsuji, K. Taniguchi, S. Imai, S. Terakawa, H. Kobayashi,7th Handai Nanoscience and Nanotechnology International Symposium,Nov.10-11,2011、Japan, 2011.11, International Conference(Non Proceeding)

  • Photoluminescence of Si Nanoparticles Produced from Si Swarf with Photochemical Reactions, T. Matsumoto, J. Furukawa, M. Maeda, S. Terakawa, S. Imai, H. Kobayashi,2012 RCIQE International Seminar, March 5-6, 2012,Conference Hall, Hokkaido University, 2011.11, International Conference(Non Proceeding)

  • Sub-micrometer ultralow power TFT with 1.8 nm NAOS SiO2/20 nm CVD SiO2 gate stack structure, Y. Kubota, T. Matsumoto, S.Imai, M. Yamada, H. Tsuji, K. Taniguchi, S. Terakawa, H. Kobayashi, IEEE Trans. Electron Dev.,58 4 1134-1140 , 2011.04, Papers

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