School personnel information

写真b

SHIMURA Takayoshi


Keyword

Crystal Engineering,Electonic Device,Diffraction Physics,Surface Science

Mail Address

Mail Address

URL

http://www-ade.prec.eng.osaka-u.ac.jp/index.html

Gender

Male

Organization 【 display / non-display

  • 1998.08.01 - 2005.03.31, Graduate School of Engineering, Research Assistant

  • 2005.04.01 - 2005.07.31, Division of Science and Biotechnology, Graduate School of Engineering, Research Assistant

  • 2005.08.01 - 2007.01.31, Division of Precision Science & Technology and Applied Physics, Graduate School of Engineering, Research Assistant

  • 2007.02.01 - 2007.03.31, Division of Science and Biotechnology, Graduate School of Engineering, Associate Professor

  • 2007.04.01 - 2020.03.31, Division of Science and Biotechnology, Graduate School of Engineering, Associate Professor

  • 2020.04.01 - , ., Graduate School of Engineering, Associate Professor

  • 2007.04.01 - 2011.03.31, Center for Advanced Science and Innovation

Education 【 display / non-display

Nagoya University Faculty of Engineering  Graduated 1987.03
Nagoya University Graduate School, Division of Engineering  Completed 1989.03
Nagoya University Graduate School, Division of Engineering  Accomplished credits for doctoral program 1992.03

Employment Record 【 display / non-display

Osaka University, Associate Professor 2007.01 -

Research topics 【 display / non-display

  • Developments of fabrication and characterization techniques of next-generation semiconductor substrates.
    Applied physical properties-related

  • Development of high-precision X-ray imaging device
    Optical engineering and photon science-related

  • X-ray diffraction study of crystal surfaces, interfaces, thin films, and nanostructure
    Applied physical properties-related

 

Academic Papers 【 display / non-display

  • Anomalous interface fixed charge generated by forming gas annealing in SiO2/GaN MOS devices, Hidetoshi Mizobata, Yuhei Wada, Mikito Nozaki, Takuji Hosoi, Takayoshi Shimura, and Heiji Watanabe, Applied Physics Express,Volume 13, Number 8, 2020.07, Papers

  • Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET Based on Temperature-Dependent Hall Effect Measurement, Hironori Takeda, Mitsuru Sometani, Takuji Hosoi, Takayoshi Shimura, Hiroshi Yano and Heiji Watanabe, Materials Science Forum,1004, 2020.07, Papers

  • Evaluation and mitigation of reactive ion etching-induced damage in AlGaN/GaN MOS structures fabricated by low-power inductively coupled plasma, Mikito Nozaki, Daiki Terashima, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, and Heiji Watanabe, Japanese Journal of Applied Physics,Volume 59, Number SM, 2020.05, Papers

  • Insight into gate dielectric reliability and stability of SiO2/GaN MOS devices, Yuhei Wada, Mikito Nozaki, Takuji Hosoi, Takayoshi Shimura, and Heiji Watanabe, Japanese Journal of Applied Physics,Volume 59, Number SM, 2020.04, Papers

  • Comprehensive and systematic design of metal/high-k gate stack for high-performance and highly reliable SiC power MOSFET, Takuji Hosoi, Shuji Azumo, Yusaku Kashiwagi, Shigetoshi Hosaka, Kenji Yamamoto, Masatoshi Aketa, Hirokazu Asahara, Takashi Nakamura, Tsunenobu Kimoto, Tayoshi Shimura, and Heiji Watanabe, Japanese Journal of Applied Physics,Volume 59, Number 2, 2020.01, Papers

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Books 【 display / non-display

  • Other, Analysis of Orderd Structure of Buried Oxide Layers in SIMOX Waters, 1999

  • Other, Advances in the Understanding of Crystal Growth Mechanisms, Takayoshi Shimura, Elsevier Science, 1997.03

Awards 【 display / non-display

  • 2008 IWDTF Best Poster Award, T. Shimura, Y. Okamoto, T. Inoue, T. Hosoi, H. Watanabe , The Japan Society of Applied Physics, Japan, 2008.11

 

Conference management 【 display / non-display

  • International Conference, The Forum on the Science and Technology of Silicon Materials 2018, Committee menber, 2018.11