School personnel information

写真b

SHIMURA Takayoshi


Keyword

Crystal Engineering,Electonic Device,Diffraction Physics,Surface Science

Mail Address

Mail Address

URL

http://www-asf.mls.eng.osaka-u.ac.jp/

Gender

Male

Organization 【 display / non-display

  • 1998.08.01 - 2005.03.31, Graduate School of Engineering, Research Assistant

  • 2005.04.01 - 2005.07.31, Division of Science and Biotechnology, Graduate School of Engineering, Research Assistant

  • 2005.08.01 - 2007.01.31, Division of Precision Science & Technology and Applied Physics, Graduate School of Engineering, Research Assistant

  • 2007.02.01 - 2007.03.31, Division of Science and Biotechnology, Graduate School of Engineering, Associate Professor

  • 2007.04.01 - , Division of Science and Biotechnology, Graduate School of Engineering, Associate Professor

  • 2007.04.01 - 2011.03.31, Center for Advanced Science and Innovation

Education 【 display / non-display

Nagoya University Faculty of Engineering  Graduated 1987.03
Nagoya University Graduate School, Division of Engineering  Completed 1989.03
Nagoya University Graduate School, Division of Engineering  Accomplished credits for doctoral program 1992.03

Employment Record 【 display / non-display

Osaka University, Associate Professor 2007.01 -

Research topics 【 display / non-display

  • Developments of fabrication and characterization techniques of next-generation semiconductor substrates.
    Applied physical properties-related

  • Development of high-precision X-ray imaging device
    Optical engineering and photon science-related

  • X-ray diffraction study of crystal surfaces, interfaces, thin films, and nanostructure
    Applied physical properties-related

 

Academic Papers 【 display / non-display

  • Highly Efficient Room Temperature Electroluminescence from GeSn Lateral PIN Diode Fabricated by Liquid-phase Crystallization,電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理― (第25回研究会) , 65-68, 2020.01, Conference Report / Oral Presentation (In Japanese)

  • Solid-phase Grown GeSn n-MOSFETs on GOI Wafer Fabricated by Flash Lamp Annealing,電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理― (第25回研究会) , 121-124, 2020.01, Conference Report / Oral Presentation (In Japanese)

  • The Role of Oxygen Ambient Anneal for Ba-incorporated SiO2/SiC Interface, 寺尾 豊, 辻 英徳, 細井 卓治, 張 旭芳, 矢野 裕司, 志村 考功, 渡部 平司,電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理― (第25回研究会) , 137-139, 2020.01, Conference Report / Oral Presentation

  • Comprehensive and systematic design of metal/high-k gate stack for high-performance and highly reliable SiC power MOSFET, Takuji Hosoi, Shuji Azumo, Yusaku Kashiwagi, Shigetoshi Hosaka, Kenji Yamamoto, Masatoshi Aketa, Hirokazu Asahara, Takashi Nakamura, Tsunenobu Kimoto, Tayoshi Shimura, and Heiji Watanabe, Japanese Journal of Applied Physics,Volume 59, Number 2, 2020.01, Papers

  • The role of oxygen ambient anneal for Ba-incorporated SiO2/SiC interface, Y. Terao, H. Tsuji, T. Hosoi, X. Zhang, H. Yano, T. Shimura, and H. Watanabe,SISC2019, 2019.12, International Conference(Proceedings)

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Books 【 display / non-display

  • Other, Analysis of Orderd Structure of Buried Oxide Layers in SIMOX Waters, 1999

  • Other, Advances in the Understanding of Crystal Growth Mechanisms, Takayoshi Shimura, Elsevier Science, 1997.03

Awards 【 display / non-display

  • 2008 IWDTF Best Poster Award, T. Shimura, Y. Okamoto, T. Inoue, T. Hosoi, H. Watanabe , The Japan Society of Applied Physics, Japan, 2008.11

 

Conference management 【 display / non-display

  • International Conference, The Forum on the Science and Technology of Silicon Materials 2018, Committee menber, 2018.11