School personnel information

写真b

IMADE Mamoru


Mail Address

Mail Address

Gender

Male

Organization 【 display / non-display

  • 2007.04.01 - 2009.09.30, Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Specially Appointed Researcher

  • 2009.10.01 - 2011.06.30, Graduate School of Engineering, Assistant Professor

  • 2011.07.01 - 2013.03.31, Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Assistant Professor

  • 2013.04.01 - 2013.04.15, Center for Atomic and Molecular Technologies, Graduate School of Engineering, Assistant Professor

  • 2013.04.16 - 2016.07.31, Center for Atomic and Molecular Technologies, Graduate School of Engineering, Assistant Professor

  • 2016.08.01 - , Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Associate Professor

 

Academic Papers 【 display / non-display

  • Vacancy-type defects in bulk GaN grown by the Na-flux method probed using positron annihilation, A. Uedono, M. Imanishi, M. Imade, M.Yoshimura, S. Ishibashi, M. Sumiya and Y. Mori, Journal of Crystal Growth,Vol.475, pp.261-265, 2017.10, Papers

  • Control of dislocation morphology and lattice distortion in Na-flux GaN crystals, S. Takeuchi, Y. Mizuta, M. Imanishi, M. Imade, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, and A. Sakai, Journal of Applied Physics,Vol.122, pp.105303 -1-6 , 2017.09, Papers

  • Homoepitaxial HVPE growth on GaN wafers manufactured by the Na-flux method, M. Imanishi, T. Yoshida, T. Kitamura, K. Murakami, M. Imade, M. Yoshimura, M. Shibata, Y. Tsusaka, J. Matsui, and Y. Mori, Crystal Growth & Design,Vol.17, No.7, pp3806-3811, 2017.06, Papers

  • Enhancement of lateral growth of the GaN crystal with extremely low dislocation density during the Na-flux growth on a point seed, M.Hayashi, M.Imanishi, T.Yamada, D.Matsuo, K.Murakami, M.Maruyama, M.Imade, M.Yoshimura, Y.Mori, Journal of Crystal Growth,Vol.468, pp.827-830, 2017.06, Papers

  • Increase in the growth rate of GaN crystals by using gaseous methane in the Na flux method, K. Murakami, S. Ogawa, M. Imanishi, M. Imade, M. Maruyama, M. Yoshimura and Y. Mori, Japanese Journal of Applied Physics,Vol.56, pp.055502-1 - 055502-4, 2017.04, Papers

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Books 【 display / non-display

  • Special, Bulk Single Crystals of Group III Nitride Substrates and Lattice-Matched Substrates for High Performance Nitride-Based Devices, ISBN, 978-4-7813-0133-4, 2009.10