School personnel information

写真b

TAKESHI Kanashima


Keyword

semiconductor related materials

Mail Address

Mail Address

URL

http://www.ee.es.osaka-u.ac.jp/

Gender

Male

Organization 【 display / non-display

  • 1997.04.01 - 2003.03.31, Graduate School of Engineering Science, Research Assistant

  • 2003.04.01 - 2007.03.31, Department of Systems Innovation, Graduate School of Engineering Science, Research Assistant

  • 2007.04.01 - 2007.06.30, Department of Systems Innovation, Graduate School of Engineering Science, Assistant Professor

  • 2007.07.01 - , Department of Systems Innovation, Graduate School of Engineering Science, Associate Professor

Education 【 display / non-display

Osaka University Faculty of Engineering Science  Graduated 1991.03
Osaka University Graduate School, Division of Engineering Science  Completed 1996.03

Research topics 【 display / non-display

  • Preparation and characterization of high-k gate dielectrics and application for Ge-MISFET
    Electric and electronic materials-related

  • Non-volatile memory by using ferroelectrics
    Electric and electronic materials-related

  • Preparation of new functional materials by using SR.
    Material processing and microstructure control-related

  • Preparation of SiO<sub>2</sub> thin films, and characterization of these defects. MO calculation of these defects and surface reaction.
    Electric and electronic materials-related

  • Characterization of Multiferroic thin films
    Electric and electronic materials-related

Academic Society Membership 【 display / non-display

  • shinmukimaku kenkyukai

 

Academic Papers 【 display / non-display

  • A crystalline germanium flexible thin-film transistor, H. Higashi, M. Nakano, K. Kudo, Y. Fujita, S. Yamada, T. Kanashima, I.Tsunoda, H. Nakashima, and K. Hamaya, Applied Physics Letters,111 222105, 2017.11, Papers

  • Control of electrical properties in Heusler-alloy/Ge Schottky tunnel contacts by using phosphorous δ-doping with Si-layer insertion, M. Yamada, Y. Fujita, S. Yamada, T. Kanashima, K. Sawano, and K. Hamaya, Materials Science in Semiconductor Processing,70 83-85, 2017.11, Papers

  • Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks, T. Kanashima, R. Yamashiro, M. Zenitaka, K. Yamamoto, D. Wang, J. Tadano, S. Yamada, H. Nohira, H. Nakashima, and K. Hamaya, Materials Science in Semiconductor Processing,70 260-264, 2017.11, Papers

  • Spin Transport and Relaxation up to 250 K in Heavily Doped $n$-Type Ge Detected Using $\mathrmCo_2\mathrmFeAl_0.5\mathrmSi_0.5$ Electrodes, Fujita Y, Yamada M, Tsukahara M, Oka T, Yamada S, Kanashima T, Sawano K, Hamaya K., Phys. Rev. Applied,8 014007, 2017.04, http://orcid.org/0000-0002-9623-9926, Other

  • Temperature-independent spin relaxation in heavily doped n-germanium, Y. Fujita, M. Yamada, S. Yamada, T. Kanashima, K. Sawano, and K. Hamaya, Physical Review B,94 245302, 2016.12, Papers

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Books 【 display / non-display

  • Special, P(VDF-TeFE)/Organic Semiconductor Structure Ferroelectric-GateFETs, T. Kanashima and M. Okuyama, Springer, ISBN, 978-94-024-0841-6, 2016.01