School personnel information

写真b

YOSHIMURA Satoru


Keyword

plasma, ion beam

Organization 【 display / non-display

  • 1998.05.01 - 2003.03.31, Graduate School of Engineering, Research Assistant

  • 2003.04.01 - 2007.03.31, Science and Technology Center for Atoms,Molecules and Ions Control, Graduate School of Engineering, Associate Professor

  • 2007.04.01 - 2013.03.31, Science and Technology Center for Atoms,Molecules and Ions Control, Graduate School of Engineering, Associate Professor

  • 2013.04.01 - 2013.04.15, Center for Atomic and Molecular Technologies, Graduate School of Engineering, Associate Professor

  • 2013.04.16 - , Center for Atomic and Molecular Technologies, Graduate School of Engineering, Associate Professor

Education 【 display / non-display

Kyoto University Faculty of Science  Graduated 1992.03
Kyoto University Graduate School, Division of Natural Science  Completed 1994.03
Kyoto University Graduate School, Division of Natural Science  Accomplished credits for doctoral program 1997.03
Kyoto University Graduate School, Division of Natural Science  Completed 2000.01

Employment Record 【 display / non-display

research associate, Osaka University 1997.04 - 2003.03
associate professor, Osaka University 2003.04 -

Research topics 【 display / non-display

  • Computer tomography of high temperature plasma, Wave heating of high temperature plasma, Low energy ion beam
    Fundamental plasma-related

Academic Society Membership 【 display / non-display

  • The Japan Society of Plasma Science and Nuclear Fusion Research

  • The Physical Society of Japan

  • Smart Processing Society

  • The Japan Society of Applied Physics

 

Academic Papers 【 display / non-display

  • Characteristics of films deposited by the irradiation of GeCHx+ ions produced from hexamethyldigermane and their dependence on the injected ion energy, S. Yoshimura, S. Sugimoto, T. Takeuchi, K. Murai, M. Kiuchi, Nuclear Instruments and Methods in Physics Research B,Vol. 461, pp. 1-5, 2019.12, Papers

  • Effects of injected ion energy on silicon carbide film formation by low-energy SiCH3+ beam irradiation, S. Yoshimura, S. Sugimoto, T. Takeuchi, K Murai, M. Kiuchi, Thin Solid Films,Vol. 685, pp. 408-413., 2019.09, Papers

  • Low-energy mass-selected ion beam deposition of silicon carbide with Bernas-type ion source using methylsilane, S. Yoshimura, S. Sugimmoto, T. Takeuchi, K. Murai, M. Kiuchi, AIP Advances,Vol. 9, 095051, 2019.09, Papers

  • Identification of fragment ions produced from hexamethyldigermane and the production of low-energy beam of fragment ion possessing Ge-C bond, S. Yoshimura, S. Sugimoto, T. Takeuchi, M. Kiuchi, AIP Advances,Vol. 9, 025008 (2019), 2019.02, Papers

  • Identification of fragment ions produced from hexamethyldisilazane and production of low-energy mass-selected fragment ion beam, S. Yoshimura, S. Sugimoto, T. Takeuchi, K. Murai, M. Kiuchi, Nuclear Instruments and Methods in Physics Research B,Vol. 430, pp. 1-5, 2018.09, Papers

display all >>