School personnel information

写真b

ICHIKAWA Shuhei


Date of Birth

1989.10

Keyword

Semiconductor, optical characterization, and crystal growth

Mail Address

Mail Address

Laboratory Phone number

+81-6-6879-7548

Laboratory Fax number

+81-6-6879-7536

URL

http://www.mat.eng.osaka-u.ac.jp/mse6/

Gender

Male

Organization 【 display / non-display

  • 2017.04.01 - 2018.03.31, Research Center for Ultra-High Voltage Electron Microscopy, Assistant Professor

  • 2018.04.01 - 2020.09.15, Division of Materials and Manufacturing Science, Graduate School of Engineering, Assistant Professor

  • 2020.09.16 - , Research Center for Ultra-High Voltage Electron Microscopy, Assistant Professor

  • 2018.04.01 - , Research Center for Ultra-High Voltage Electron Microscopy, Assistant Professor

Education 【 display / non-display

Kyoto University Faculty of Engineering  Graduated 2012.03
Kyoto University Graduate School, Division of Engineering  Completed 2014.03
Kyoto University Graduate School, Division of Engineering  Completed Ph.D. in Engineering 2017.03

Employment Record 【 display / non-display

Specially Appointed Assistant Professor, Research Center for Ultra-High Voltage Electron Microscopy in Osaka Univ. 2017.04 - 2018.03
Assistant Professor (as a concurrent post), Research Center for Ultra-High Voltage Electron Microscopy in Osaka Univ. 2018.04 -
Assistant Professor, Division of Materials and Manufacturing Science, Graduate School of Engineering in Osaka Univ. 2018.04 -

Research topics 【 display / non-display

  • Crystal engineering
    Crystal engineering-related

  • Crystal engineering
    Crystal engineering-related

Academic Society Membership 【 display / non-display

  • the Japanese Association for Crystal Growth

  • The Japan Society of Applied Physics

 

Academic Papers 【 display / non-display

  • Enhancement of Er luminescence in microdisk resonators with Er,O-codoped GaAs, R. Higashi, M. Ogawa, J. Tatebayashi, N. Fujioka, D. Timmerman, S. Ichikawa, and Y. Fujiwara, Journal of Applied Physics,127, 23, 233101., 2020.06, Papers

  • Quantitative evaluation of enhanced Er luminescence in GaAs-based two-dimensional photonic crystal nanocavities, M. Ogawa, J. Tatebayashi, N. Fujioka, R. Higashi, M. Fujita, S. Noda, D. Timmerman, S. Ichikawa, and Y. Fujiwara, Applied Physics Letters,116, 18, 181102, 2020.05, Papers

  • Excitation Efficiency and Limitations of the Luminescence of Eu3+ Ions in GaN, 88. D. Timmerman, B. Mitchell, S. Ichikawa, J. Tatebayashi, M. Ashida, and Y. Fujiwara, Physical Review Applied,13 014044, 2020.04, Papers

  • Room-temperature operation of near-infrared light emitting diode based on Tm-doped GaN with ultra-stable emission wavelength, S. Ichikawa, N. Yoshioka, J. Tatebayashi, and Y. Fujiwara, Journal of Applied Physics,127, 11, 113103, 2020.03, Papers

  • GaN:Eu-based resonant-cavity light emitting diodes with conductive AlInN/GaN distributed Bragg reflectors, Tomohiro Inaba, Jun Tatebayashi, Keishi Shiomi, Takanori Kojima, Dolf Timmerman, Shuhei Ichikawa, and Yasufumi Fujiwara, ACS Applied Electronic Materials,2(3) 732, 2020.02, Papers

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Awards 【 display / non-display

  • ISPlasma2019 The Best Poster Presentation Awards, Shuhei Ichikawa, ISPlasma2019, 2019.03

  • Young Scientist Presentation Award, Shuhei ICHIKAWA, The Japan Society of Applied Physics, 2014.09

  • Young Scientist Presentation Award, Shuhei ICHIKAWA, The Japanese Association for Crystal Growth, 2014.07

  • EMS Award, Shuhei ICHIKAWA, Electronic Materials Symposium, 2014.07

  • Excellent Paper Award, Shuhei ICHIKAWA, Integrated Nanotechnology Foundation of Kyoto Univ., 2013.03

 

Conference management 【 display / non-display

  • National Conference, The 37th Electronic Materials Symposium, 2018.10