School personnel information

写真b

ICHIKAWA Shuhei


Date of Birth

1989.10

Keyword

Semiconductor, optical characterization, and crystal growth

Mail Address

Mail Address

Laboratory Phone number

+81-6-6879-7548

Laboratory Fax number

+81-6-6879-7536

URL

http://www.mat.eng.osaka-u.ac.jp/mse6/

Gender

Male

Organization 【 display / non-display

  • 2017.04.01 - 2018.03.31, Research Center for Ultra-High Voltage Electron Microscopy, Assistant Professor

  • 2018.04.01 - , Division of Materials and Manufacturing Science, Graduate School of Engineering, Assistant Professor

  • 2018.04.01 - , Research Center for Ultra-High Voltage Electron Microscopy, Assistant Professor

Education 【 display / non-display

Kyoto University Faculty of Engineering  Graduated 2012.03
Kyoto University Graduate School, Division of Engineering  Completed 2014.03
Kyoto University Graduate School, Division of Engineering  Completed Ph.D. in Engineering 2017.03

Employment Record 【 display / non-display

Specially Appointed Assistant Professor, Research Center for Ultra-High Voltage Electron Microscopy in Osaka Univ. 2017.04 - 2018.03
Assistant Professor (as a concurrent post), Research Center for Ultra-High Voltage Electron Microscopy in Osaka Univ. 2018.04 -
Assistant Professor, Division of Materials and Manufacturing Science, Graduate School of Engineering in Osaka Univ. 2018.04 -

Academic Society Membership 【 display / non-display

  • the Japanese Association for Crystal Growth

  • The Japan Society of Applied Physics

 

Academic Papers 【 display / non-display

  • Enhanced luminescence efficiency of GaN: Eu-based light-emitting diodes by localized surface plasmons utilizing gold nanoparticles, J. Tatebayashi, T. Yamada, T. Inaba, S. Ichikawa, and Y. Fujiwara, Japanese Journal of Applied Physics,58 (SC), SCC09, 2019.05, Papers

  • Color-tunablility in GaN LEDs Based on Atomic Emission Manipulation Under Current Injection, B. Mitchell, R. Wei, J. Takatsu, D. Timmerman, T. Gregorkiewicz, W. Zhu, S. Ichikawa, J. Tatebayashi, Y. Fujiwara, and V. Dierolf, ACS Photonics,6 1153-1161, 2019.04, Papers

  • Broad range thickness identification of hexagonal boron nitride by colors, Y. Anzai, M. Yamamoto, S. Genchi, K. Watanabe, T. Taniguchi, S. Ichikawa, Y. Fujiwara, and H. Tanaka, Applied Physics Express,12(5) 055007/1-055007/5, 2019.03, Papers

  • AlxGa1−xN‐Based Quantum Wells Fabricated on Macrosteps Effectively Suppressing Nonradiative Recombination, M. Hayakawa, S. Ichikawa, M. Funato, and Y. Kawakami, Advanced Optical Materials,7 (2), 1801106, 2019.01, Papers

  • Dominant Nonradiative Recombination Paths and Their Activation Processes in AlxGa1-xN-related Materials, S. Ichikawa, M. Funato, and Y. Kawakami, Physical Review Applied,10 (6), 064027, 2018.12, Papers

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Awards 【 display / non-display

  • ISPlasma2019 The Best Poster Presentation Awards, Shuhei Ichikawa, ISPlasma2019, 2019.03

  • Young Scientist Presentation Award, Shuhei ICHIKAWA, The Japan Society of Applied Physics, 2014.09

  • Young Scientist Presentation Award, Shuhei ICHIKAWA, The Japanese Association for Crystal Growth, 2014.07

  • EMS Award, Shuhei ICHIKAWA, Electronic Materials Symposium, 2014.07

  • Excellent Paper Award, Shuhei ICHIKAWA, Integrated Nanotechnology Foundation of Kyoto Univ., 2013.03

 

Conference management 【 display / non-display

  • National Conference, The 37th Electronic Materials Symposium, 2018.10