School personnel information



Organization 【 display / non-display

  • 2016.11.01 - 2020.03.31, Division of Science and Biotechnology, Graduate School of Engineering, Assistant Professor

  • 2020.04.01 - , ., Graduate School of Engineering, Assistant Professor


Academic Papers 【 display / non-display

  • Recent progress in understanding carbon-related interface defects and electrical properties in SiC-MOS devices, T. Hosoi, K. Moges, T. Shimura, H. Watanabe,INFOS 2019, 2019.07, International Conference(Proceedings)

  • Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N2-Annealed SiO2/4H-SiC(0001) Structures, Kidist Moges, Mitsuru Sometani, Takuji Hosoi, Takayoshi Shimura, Shinsuke Harada, Heiji Watanabe, Materials Science Forum,Vol. 963, pp 226-229, 2019.07, Papers

  • Characterization of nitrogen distribution near SiO2/SiC interfaces annealed in NO,シリコン材料・デバイス研究会(SDM), vol. 119, no. 96, 2019.06, Conference Report / Oral Presentation (In Japanese)

  • Performance improvement in 4H-SiC(0001) p-channel metal-oxide-semiconductor field-effect transistors with a gate oxide grown at ultrahigh temperature, Kidist Moges, Takuji Hosoi, Takayoshi Shimura, and Heiji Watanabe, Applied Physics Express,Volume 12, Number 6, 2019.05, Papers

  • NO窒化処理を施したSiO2/SiC界面における窒素原子分布の高精度評価, Kidist Moges,染谷満,細井卓治,志村考功,原田信介,渡部平司,先進パワー半導体分科会 第5回講演会, 2018.11, Conference Report / Oral Presentation

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