School personnel information

写真b

Ishibe Takafumi


Keyword

Physics of Semiconductor

URL

http://www.adv.ee.es.osaka-u.ac.jp/

Organization 【 display / non-display

  • 2015.10.01 - 2017.03.31, Department of Systems Innovation, Graduate School of Engineering Science, Doctoral Program Student

  • 2017.05.01 - 2018.09.30, Department of Systems Innovation, Graduate School of Engineering Science, Doctoral Program Student

  • 2018.10.01 - , Department of Systems Innovation, Graduate School of Engineering Science, Assistant Professor

Education 【 display / non-display

Osaka University Faculty of Engineering Science  Graduated 2011.03
Osaka University Graduate School, Division of Engineering Science  Completed 2013.03
Osaka University Graduate School, Division of Engineering Science  Completed 2018.09

Research topics 【 display / non-display

  • Electron device and electronic equipment-related

  • Nanostructural physics-related, Thermal engineering-related, Thin film/surface and interfacial physical properties-related

 

Academic Papers 【 display / non-display

  • High thermoelectric performance in high crystallinity epitaxial Si films containing silicide nanodots with low thermal conductivity, Shunya Sakane, Takafumi Ishibe, Takahiro Hinakawa, Nobuyasu Naruse, Yutaka Mera, Md. Mahfuz Alam, Kentarou Sawano, Yoshiaki Nakamura, Applied Physics Letters,115 182104, 2019.10, Papers

  • Modulation of lattice constants by changing the composition and strain in incommensurate Nowotny chimney-ladder phase FeGeγ epitaxially grown on Si, Tsukasa Terada, Takafumi Ishibe, and Yoshiaki Nakamura, Surface Science,690 121470, 2019.07, Papers

  • Thermoelectric power factor enhancement based on carrier transport physics in ultimately phonon-controlled Si nanostructures, Shunya Sakane, Takafumi Ishibe, Tatsuhiko Taniguchi, Nobuyasu Naruse, Yutaka Mera, Takeshi Fujita, Md. Mahfuz Alam, Kentarou Sawano, Nobuya Mori, and Yoshiaki Nakamura, Materials Today Energy ,13 56-63, 2019.05, Papers

  • Semiconductor Nanostructure Design for Thermoelectric Property Control, Y. Nakamura, T. Ishibe, T. Taniguchi, T. Terada, R. Hosoda, S. Sakane, International Journal of Nanoscience, 2019.03, Papers

  • Significant reduction in the thermal conductivity of Si-substituted Fe2VAl epilayers, K. Kudo, S. Yamada, J. Chikada, Y. Shimanuki, T. Ishibe, S. Abo, H. Miyazaki, Y. Nishino, Y. Nakamura, and K. Hamaya, Physical Review B,99 054201-1-054201-7, 2019.02, Papers

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