School personnel information

写真b

IMANISHI Masayuki


Mail Address

Mail Address

Gender

Male

Organization 【 display / non-display

  • 2013.04.01 - 2016.03.28, Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Doctoral Program Student

  • 2016.04.01 - 2016.08.31, Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Specially Appointed Researcher

  • 2016.09.01 - 2018.03.31, Center for Atomic and Molecular Technologies, Graduate School of Engineering, Assistant Professor

  • 2018.04.01 - , Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Assistant Professor

 

Academic Papers 【 display / non-display

  • Quantitative analysis of lattice plane microstructure in the growth direction of a modified Na-flux GaN crystal using nanobeam X-ray diffraction, Kazuki Shida, Nozomi Yamamoto, Tetsuya Tohei, Masayuki Imanishi, Yusuke Mori, Kazushi Sumitani, Yasuhiko Imai, Shigeru Kimura and Akira Sakai, Japanese Journal of Applied Physics,Vol.58, No.SC, pp.SCCB16-1/6, 2019.06, Papers

  • Effect of methane additive on GaN growth using the OVPE method, Akira Kitamoto, Junichi Takino, Tomoaki Sumi, Masahiro Kamiyama, Shintaro Tsuno, Keiju Ishibashi, Yoshikazu Gunji, Masayuki Imanishi, Yoshio Okayama, Masaki Nobuoka, Masashi Isemura, Masashi Yoshimura and Yusuke Mori, Japanese Journal of Applied Physics,Vol.58, No.SC, pp.SC1021-1/5, 2019.05, Papers

  • Identification of dislocation characteristics in Na-flux-grown GaN substrates using bright-field X-ray topography under multiple-diffraction conditions , Y. Tsusaka, H. Mizuochi, M. Imanishi, M. Imade, Y. Mori, and J. Matsui, Journal of Applied Physics,Vol.125, pp.125105-1/7, 2019.03, Papers

  • Promotion of lateral growth of GaN crystals on point seeds by extraction of substrates from melt in the Na-flux method, Masayuki Imanishi, Kosuke Murakami, Takumi Yamada, Keisuke Kakinouchi, Kosuke Nakamura, Tomoko Kitamura, Kanako Okumura, Masashi Yoshimura, and Yusuke Mori, Applied Physics Express,Vol.12、pp.045508-1/5, 2019.03, Papers

  • Grows of Hight-quality Bulk GaN Crystals by the Na-flux Method, Masayuki Imanishi, Yusuke Mori,Vol.53, No.12, p.846-848, 2018.12, Review Papers(In Japanese)

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