School personnel information

写真b

IMANISHI Masayuki


Mail Address

Mail Address

Gender

Male

Organization 【 display / non-display

  • 2013.04.01 - 2016.03.28, Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Doctoral Program Student

  • 2016.04.01 - 2016.08.31, Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Specially Appointed Researcher

  • 2016.09.01 - 2018.03.31, Center for Atomic and Molecular Technologies, Graduate School of Engineering, Assistant Professor

  • 2018.04.01 - , Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Assistant Professor

  • 2018.04.01 - , Center for Atomic and Molecular Technologies, Graduate School of Engineering

 

Academic Papers 【 display / non-display

  • Intergrowth of two aspirin polymorphism observed with Raman spectroscopy, Yuka Tsuri, Mihoko Maruyama, Hiroshi Y. Yoshikawa, Shino Okada, Hiroaki Adachi, Kazufumi Takano, Katsuo Tsukamoto, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Journal of Crystal Growth,Vol.532, pp.125430-1/6, 2019.12, Papers

  • Influence of GaN/sapphire contact area on bowing of GaN wafer grown by the Na-flux method with a sapphire dissolution process, 2. Takumi Yamada, Masayuki Imanishi, Kosuke Murakami, Kosuke Nakamura, Masashi Yoshimura and Yusuke Mori, Journal of Crystal Growth,Vol.533, 2019.12, Papers

  • Growth of large and high quality CsLiB6O10 crystals from self-flux solutions for high resistance against UV laser-induced degradation, R. Murai, T. Fukuhara, G. Ando,Y. Tanaka, Y. Takahashi, K. Matsumoto, H. Adachi, M. Maruyama, M. Imanishi, K. Kato, M. Nakajima, Y. Mori, and M. Yoshimura, Applied Physics Express,Vol.12, 075501, 2019.06, Papers

  • Effect of methane additive on GaN growth using the OVPE method, Akira Kitamoto, Junichi Takino, Tomoaki Sumi, Masahiro Kamiyama, Shintaro Tsuno, Keiju Ishibashi, Yoshikazu Gunji, Masayuki Imanishi, Yoshio Okayama, Masaki Nobuoka, Masashi Isemura, Masashi Yoshimura and Yusuke Mori, Japanese Journal of Applied Physics,Vol.58, No.SC, pp.SC1021-1/5, 2019.05, Papers

  • Quantitative analysis of lattice plane microstructure in the growth direction of a modified Na-flux GaN crystal using nanobeam X-ray diffraction, Kazuki Shida, Nozomi Yamamoto, Tetsuya Tohei, Masayuki Imanishi, Yusuke Mori, Kazushi Sumitani, Yasuhiko Imai, Shigeru Kimura, Akira Sakai, Japanese Journal of Applied Physics,Vol.58, No.SC, pp.SCCB16-1/6, 2019.05, Papers

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